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filingDate 1988-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11ee0d2372251a455e1181c0aba2c7a2
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publicationDate 1990-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0350531-A2
titleOfInvention Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer
abstract A dopant film (21) contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive (22). Releasable sheets (23) sand­wich the dopant film. The dopant film permits automated alternate stacking with semiconductor wafers, providing an advantage of labor saving. When the alternate stack­ing is automated, it will become hard for the wafer breakage to occur, sharply decreasing the rate of break­age. Furthermore, since the adhesion of a semiconductor wafer improves, the variation in the diffusion depth will decrease.
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priorityDate 1988-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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