http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0338251-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate | 1989-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1c423f7b0f4beaf6faf9cbcf8e7eea9 |
| publicationDate | 1989-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0338251-A1 |
| titleOfInvention | Method of manufacturing metal-semiconductor field effect transistors |
| abstract | A semiconductor device which comprises a semi-insulating substrate (1) and a plurality of field effect transistors (FETs) formed on the semi-insulating substrate (1). An epitaxial layer (2)of one conductivity type is formed on the semi-insulating substrate by a crystal growth technique which is capable of controlling a film thickness at an atomic level. At least some of channel active layers of the FETs have different threshold voltages one another due to a difference in thickness of the epitaxial layer (2) and/or due to an additional ion implantation region selectively formed in the epitaxial layer (2). A manufacturing method of the semiconductor device is also disclosed, wherein a portion of the epitaxial layer (2) corresponding to the channel active layer of a FET is thickened by the repetition of an epitaxial growth, thinned by the etching of the epitaxial layer or ion implanted thereby obtaining a different threshold voltage from that of another FET. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0442493-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5341007-A |
| priorityDate | 1988-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.