Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-128 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-437 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 |
filingDate |
1989-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ea4c0ec5adb6ffd7e0fe8f816aaabf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e7125f9f0ff84cbf368ea08dce6c9b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16e7e7a4663ce8d06c93f9fc7676342c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85ea15a53cd6d021bea71a8ce2c5ded1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be56abf9e7af79ea0eb554897be0b435 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d49fe47e4848249930fdace0022dafa |
publicationDate |
1989-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-0327121-A2 |
titleOfInvention |
Superconducting field effect transistor |
abstract |
A superconducting field effect transistor which is very small in size and high in dimensional accuracy, and a method of fabricating this transistor are disclosed. According to the above transistor and method, the fine structure of a gate electrode (3) part can be fabricated easily and accurately. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5521862-A |
priorityDate |
1988-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |