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filingDate 1988-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1989-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0315170-A1
titleOfInvention Process for manufacturing silicon wafers
abstract Silicon wafers and processes for their production are specified which have an intrinsic getter effect and on which thin oxide layers with high dielectric strength can be produced. According to the invention, the panes are subjected to a treatment which smoothes the pane surface during manufacture after the intrinsic getters have been produced, for example polished again. Subsequently applied oxide layers are characterized by an increased dielectric strength compared to untreated panes.
priorityDate 1987-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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