| abstract |
In an integrated circuit memory of the type whose memory cell (2) is provided with a floating gate transistor (5) interposed between a control gate (7) and the conduction channel (6) of this transistor, we s 'Arranged so that the control grid passes, alone, over a part (10) of the conduction channel so as to govern it. We show that by doing so we can remove a control transistor from the memory cell. This increases the ability for a large integration of a memory made with such memory cells. |