| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate |
1988-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbee6b2059646175073c21d4feac106d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78d5ff5780fb4e75e3a299e2e166c77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e29e2c8de48e39bb07bcd282588c29c7 |
| publicationDate |
1989-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0305144-A2 |
| titleOfInvention |
Method of forming crystalline compound semiconductor film |
| abstract |
A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S NDS ) having a smaller nucleation density and a nucleation surface (S NDL ) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND L ) than the nucleation density (NDs) of the non-nucleation surface (S NDS ) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R₁-X n -R₂ wherein n is an integer of 2 or more; R₁ and R₂ each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II - VI compound semiconductor film on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2667197-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5212113-A |
| priorityDate |
1987-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |