http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0299998-A1

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filingDate 1987-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7ef099c5d8b30511c05d6b2a7476039
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publicationDate 1989-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0299998-A1
titleOfInvention NIPI BREAKING INDEX MODULATION DEVICE AND METHOD.
abstract Several optical modulation systems and methods have been described based on the modulation of the refractive index of a nipi structure. The modulation of the refractive index is obtained by the application of a regulated voltage difference between the n-doped layers and the p-doped layers of the structure. Alternating contacts with the layers are formed by conductive elements which extend through the structure. One of the elements establishes ohmic contacts with the layers n, and the other with the layers p. In the case of implantation as a spatial optical phase molder, one of the nipi contacts has the form of a grid which divides the structure into a matrix of image elements or pixels, the other contact comprising separate wires that extend across each pixel. A spatial voltage configuration is applied to the pixel wires to inject charges into their corresponding layers, and thus modulate the refractive indices of the pixels, which results in the desired spatial phase modulation of a reading beam transmitted through the nipi structure. Also described are various guided wave applications, in which a beam is transmitted through a nipi structure parallel to the n and p layers. The nipi structure is not divided into pixels, but rather presents a common voltage difference between its n and p layers. The refractive index of the structure is modulated in space by varying this voltage difference, and the modulation of the voltage in space is transferred to the beam.
priorityDate 1987-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 20.