http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0297867-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-933 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
filingDate | 1988-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1993-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1993-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0297867-B1 |
titleOfInvention | A process for the growth of iii-v group compound semiconductor crystal on a si substrate |
priorityDate | 1987-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.