| abstract |
In making defect correction and circuit change in a semiconductor integrated circuit device using a focused ion beam etching technique, the present invention relates to an IC or VLSI structure having a trial cutting region, a test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods. |