| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-411
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-102
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8229 |
| filingDate |
1987-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da88b61e9ccb5c39140f80a71f4c8454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4668c57d09e13dd2175f3ae78b01f9a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58d0ad2806e22295452b87fc6566e7b7 |
| publicationDate |
1988-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0284665-A1 |
| titleOfInvention |
Static semiconductor memory |
| abstract |
This invention relates generally to Static Random Access Memories (SRAM) and more particularly, relates to a SRAM cell (1) wherein soft-error due to a-particle radiation is reduced by permitting the potential at the common-emitter node (11; 12) of the cross-coupled transistors (5; 6) of the memory cell to swing freely. Still more particularly, it relates to a SRAM cell wherein the common-emitter node of the cell is decoupled from a heavily capacitively loaded word line (3) with its common constant current source (21) by means of a constant current source (22) or current mirror disposed in each cell between the common-emitter node and the word line |
| priorityDate |
1987-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |