http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0275267-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-482 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1987-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1991-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1991-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0275267-B1 |
| titleOfInvention | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
| abstract | A process for depositing an oxide layer on a substrate by exposing the substrate to a selected vapor phase reactant, a chosen oxygen-containing precursor, and a selected physical quenching gas, in the presence of radiation of a selected wavelength. The radiation causes the direct dissociation of the oxygen-containing precursor to form neutral oxygen atoms in an excited electronic state. The quenching gas physically interacts with the oxygen atoms in the excited electronic state to form oxygen atoms in the unexcited electronic state. The latter then react with the vapor phase reactant to form the oxide, which deposits as a layer on the substrate. The rate of reaction to form and deposit the oxide layer is enhanced by the conversion of the excited electronic state oxygen atoms to unexcited electronic state oxygen atoms by the physical quenching gas. |
| priorityDate | 1986-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.