| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-02827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-0289
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-02881 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-00 |
| filingDate |
1987-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c843b3c5a513a59d979dc52c38fd0141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83c6ca69adc46069264075dc60ba1e96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21ebf03ecf52004908e4cb3fa2fbe3b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf73fa0703a13e42987bd34af1728a20 |
| publicationDate |
1988-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0273395-A2 |
| titleOfInvention |
Method for measuring lattice defects in a semiconductor |
| abstract |
A method for measuring lattice defects in a semiconductor such as a silicon crystal detects an ultrasonic velocity of an ultrasonic pulse propagating through the semiconductor (25) to which heat is variably applied. Then, an elastic constant of the semiconductor is calculated from the ultrasonic velocity. A concentration or density of lattice defects of the semiconductor (25) is obtained by converting the elastic constant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1997940-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5210626-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1997940-A1 |
| priorityDate |
1986-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |