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filingDate 1987-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6acaa4e7a3a65cc9468d80ae6366fe3f
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publicationDate 1988-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0265251-A2
titleOfInvention Heterojunction p-i-n-photovoltaic cell
abstract A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer (12), a high resistivity intrinsic semiconductor layer (14), used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer (16). The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First (20) and second (22) ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.
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type http://data.epo.org/linked-data/def/patent/Publication

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