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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80
filingDate 1987-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f652520d2be5b037bf5356bf8b2dd3e
publicationDate 1988-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0261195-A1
titleOfInvention An etch technique for metal mask definition
abstract One technique (Figure 3) for forming high definition masks is to form a selectively non-corrodible masking layer (1) using an electron resistant resist (7) and an electron lithographic technique and to employ this layer for the selective pickling of a metallic coating (3). Another selective stripper is then used to remove the masking material (1). The metallic coating (3) is generally made of chromium and can be selectively pickled using a chlorine / oxygen plasma. The masking material (1) can be silicon dioxide and can be etched using a fluorocarbon containing hydrogen (for example CF4 / H2; CHF3). The masking material may optionally be made of aluminum and may be etched using chlorine, boron trichloride or carbon tetrachloride plasma. Other masking materials can be used, such as titanium, silicon, germanium or nickel. The masking layer can be formed using an electron resistant resist above the layer material (Figures 1 to 3). The masking material and the electron-resistant resist can optionally be applied in reverse order and a flotation separation process can be used (Figure 6).
priorityDate 1986-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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