http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0256031-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1986-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1992-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1992-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0256031-B1 |
| titleOfInvention | Method for developing poly(methacrylic anhydride) resists |
| abstract | haocess for forming an image with a positive resist, said process involves the steps of forming on a substrate a positive resist layer of poly(methacrylic anhydride). The resist layer is baked at a temperature of 170°C to 260°C and thereafter irradiated with a predetermined pattern of ionizing radiation. The irradiated area is then developed utilizing a developer solvent that is composed of solution of a base selected from the group consisting of alkali metal hydroxides, ammonium hydroxides (including quaternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C1 - C12 carbon content and water or mixtures thereof; and rinsing the resist with the same solvent selected above. |
| priorityDate | 1986-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 253.