http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0255911-A3
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-388 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
filingDate | 1987-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1988-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0255911-A3 |
titleOfInvention | Metal-dielectric-metal layer structure with low resistance via connections |
abstract | A structure is provided suitable for electronic packaging nand for integrated microelectronic circuits wherein a ndiscontinuous interface layer (26) is used to insure good nelectrical conductivity between two metallic layers (M1,M2), nwhile at the same time enhancing adhesion between one of the nmetallic layers and a dielectric layer (12). In particular, na discontinuous Cr layer (26) deposited onto a substrate ncomprising a first polyimide portion (12) and a second Cu (18) nportion will ensure good adhesion between a copper layer (22) nand the polyimide, while still maintaining low electrical nresistance in the copper-copper electrical contact region (14). |
priorityDate | 1986-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.