http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0255911-A3

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-388
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filingDate 1987-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1988-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0255911-A3
titleOfInvention Metal-dielectric-metal layer structure with low resistance via connections
abstract A structure is provided suitable for electronic packaging nand for integrated microelectronic circuits wherein a ndiscontinuous interface layer (26) is used to insure good nelectrical conductivity between two metallic layers (M1,M2), nwhile at the same time enhancing adhesion between one of the nmetallic layers and a dielectric layer (12). In particular, na discontinuous Cr layer (26) deposited onto a substrate ncomprising a first polyimide portion (12) and a second Cu (18) nportion will ensure good adhesion between a copper layer (22) nand the polyimide, while still maintaining low electrical nresistance in the copper-copper electrical contact region (14).
priorityDate 1986-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0163830-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978

Total number of triples: 24.