| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b25c5ac71663b301b2cda31969c890f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1987-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_646ea8f7250b4bf8b155f4a752cbce6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79efc9858b867d4605405683e01fabc6 |
| publicationDate |
1987-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0241991-A2 |
| titleOfInvention |
Field effect transistor having a membrane overlying the gate insulator |
| abstract |
A field effect transistor is provided that includes a membrane overlying its gate insulator. The field effect transistor has separated semiconductor drain and source regions of a polarity opposite to that of the substrate. An electrically insulating layer overlies the gate region between the source and drain region to thereby function as a gate insulator. A membrane overlies the electrically insulating layer, and an electrical contact electrically connects the field effect transistor in a circuit. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7662341-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1085320-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1085319-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5138251-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6521109-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004036203-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0471269-A1 |
| priorityDate |
1986-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |