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filingDate 1987-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1989-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0239120-A3
titleOfInvention Method of producing thin film electroluminescent structures
abstract Method of producing a thin film electroluminescent ndevice by sputtering a first transparent electrode (11) of nindium tin oxide or tin oxide on to a glass substrate n(10), sputtering a layer of insulating material (12), for nexample barium tantalate, over the transparent electrode, nand then forming a phosphor layer (13) of zinc sulfide nwith manganese as an activator on the layer of insulating nmaterial (12). To form the phosphor layer (13) electrical nenergy is applied to a target containing elemental zinc in nan atmosphere containing hydrogen sulfide and argon to ncause sputtering therefrom. Elemental zinc reacts with nthe hydrogen sulfide to deposit a layer (13) of zinc nsulfide over the layer of insulating material (12). The nmanganese is cosputtered either from a separate target or nfrom a single target incorporating both zinc and nmanganese.
priorityDate 1986-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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