http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0221164-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e42866d6c3cedbae517fbec85cb1a88a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate | 1986-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b07f013a76851b86c2738ea05bfe4196 |
| publicationDate | 1987-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0221164-A1 |
| titleOfInvention | METHOD AND DEVICE OF MAGNETOPLASMAS WITH A LARGE VOLUME. |
| abstract | A large-volume magnetic plasma (a) is created by establishing a plasma in an electrically insulated tubular cavity formed by a cylinder (10) containing a source of ions and electrons at low pressure, and coupled with energy of high frequency by an antenna (32) located along the cavity; and (b) allowing the plasma to enter an adjacent auxiliary area (20) connected to the cavity (10). The operational conditions in the cavity (10) are preferably such as to facilitate the production of atomic species in the plasma, which occurs when the operational conditions satisfy the relationships D.W.p - 50,000 and 10 <= f. L2 / B <= 100. W is the power in watts applied to the antenna (32), D is the diameter in cm of the plasma cavity (10), p is the pressure prevailing in the cavity (10) (and in the auxiliary zone (20)) expressed in millitorrs, f is the frequency in MHz of the high frequency power, L is the length in cm of the antenna (32) and (B) is the magnetic field in the cavity ( 10) created by a winding (13) which surrounds the cavity, expressed in gauss. The large plasmas thus produced are useful for dry etching of semiconductor materials, such as silicon wafers, for etching of polymers and for surface treatments of other materials. |
| priorityDate | 1985-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.