http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0220233-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c4ef89980886954ab1c9320a7d10b933 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R35-005 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-956 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R35-00 |
| filingDate | 1986-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9808a13bd022ba3603f55c0be3219be7 |
| publicationDate | 1987-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0220233-A1 |
| titleOfInvention | TARGET KEYS FOR PROBE ALIGNMENT ON A SEMICONDUCTOR WAFER. |
| abstract | A system comprising at least three configurations of alignment keys (10, 12 and 14) positioned in the trace lines of a semiconductor chip (Fig. 1) allows more precise placement of the wafer probes and a more precise positioning of fuses for the purpose of blowing selected fuses using laser energy. A particular configuration of the alignment keys (12) comprises pairs of lines located symmetrically around a horizontal axis (Yb) and a vertical axis (Xb) so as to generate double reflection signals (24) when it is scanned perpendicularly (26) by the laser. The determination of the accuracy based on the double signal laser configuration as characterized by the configuration (24) is insensitive to the obliquity of the scanning path of the laser (28), (28A) and to the variations of the resulting amplitudes. (27) laser reflection signals due to the drift of the electronic amplifiers, to the variation of the reflection signals due to the drift of the electronic amplifiers, and insensitive to the variation of the reflection coefficients and to the variation of the intensity of the laser beam and threshold levels (30), (30a) of sensitivity. |
| priorityDate | 1985-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.