http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0218623-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1986-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84d18d9f9be220da869b95465f1eb857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5d2a7e6f8ac7881b0f5814d4427d437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1e789303cd58d57f4742eefbae53bd7 |
| publicationDate | 1987-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0218623-A1 |
| titleOfInvention | METHOD FOR DEPOSITING AT LEAST ONE LAYER OF AN HOMOGENEOUS COMPOUND III-V OR II-VI, PARTICULARLY Ga As, AND SUBSTRATE COATED WITH SUCH A DEPOSITION |
| abstract | A method of depositing on a substrate at least one layer of a homogeneous, in particular binary compound, of elements of families III and V or II and VI, in particular Ga and As. The substrate (4) is placed opposite an electrode (2) negatively polarized in a vacuum chamber (1a) in which the total pressure is between 10-2 and 103 pascals. The electrode is coated with one of the elements of the compound to be deposited, in particular pure gallium, and a mixture of gases composed of a neutral gas and at least one reactive gas containing the other element is admitted into the vacuum chamber. of the compound in particular arsenic in the form of arsenic hydride. The partial pressure of the reactive gas is chosen to be low compared to the partial pressure of the neutral gas, the ratio of these pressures being between 10-5 and 3.10-1. |
| priorityDate | 1985-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.