http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0209150-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-383 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-383 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1986-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd3be3df7e89c10df57c0f65bcaf02bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d07ba62d681eb35bc4c07bc4a58f1dbe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceb63c0b1d58ca3eb700ac9474be92cd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c59c1999d0ad41411876f51b691d0c54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cd92c3a9edbaba65b7cfbbd0d837621 |
| publicationDate | 1987-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0209150-A2 |
| titleOfInvention | Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor |
| abstract | A transfer chamber (11) is provided between MOCVD reaction chamber (13) and load lock chamber (12), connected to each said chambers (12, 13) through an opening (12d, 13d) for each, for preventing the reaction chamber (13) from the invasion of foreign gases, which may oxydize metals of MOCVD. The load lock chamber (12) can be evacuated or filled with an inert gas, and has a door (12a) to the outside for bringing semiconductor wafers (37) in or out. The transfer chamber (11) is provided with a gas inlet (11a) and a gas outlet (11b), through each of them an inert gas is always fed and drained for circulation, and also provided with a transfer mechanism therein for transferring wafers (37) between the loa d lock chamber (12) and the reaction chamber (13). Wafers (37) are placed on a susceptor (17) connected to a lid (15), which is driven by the transfer mechanism. A liner tube (14) for protecting the inner surface of the reaction chamber (13) from undesirable contamination caused by MOCVD reaction may be provided detachably attached to the lid (15) to enclose the wafer (37). Each opening (12d, 13d) may be provided with shutter means (12f, 13f) for sealing each opening (12d, 13d) while not being sealed by the lid (15). Oxygen or water vapor undesirably introduced are washed away by the flow of inert gas in the transfer chamber (11) on the way to the reaction chamber (13). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6908838-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5980684-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100923695-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1335414-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1335414-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0359221-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6899507-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02052617-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5833754-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4962726-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0359221-A2 |
| priorityDate | 1985-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.