| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
1985-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9154bdd5cdb493bce358c8ad354cb4a |
| publicationDate |
1986-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0203146-A1 |
| titleOfInvention |
TRENCHED TRANSISTOR. |
| abstract |
New MOS transistor structure in which the source (13), the gate (15) and the drain (14) are formed inside a trench in the semiconductor substrate. The width of the door is determined by the depth of the trench and can be increased significantly without increasing the specific surface occupied by the transistor. The resulting transistor has an exceptionally high gain for a given specific surface. Forming the transistor inside and above a series of trenches further enhances this effect. |
| priorityDate |
1984-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |