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filingDate 1986-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6167673d137e3a23ae7cea17e9d9c50c
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publicationDate 1986-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0203012-A1
titleOfInvention Photosensitive semiconductor device and its production method
abstract The device according to the invention comprises transparent grids, the side walls of which are made of silicide (6), and which, apart from these side walls, are made of polycrystalline silicon (3).
priorityDate 1985-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.