patent/EP-0202515-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0202515-A1

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-945
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
filingDate	1983-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e7125f9f0ff84cbf368ea08dce6c9b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5c82443efece01343dede41f507287b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b036a9f3e52deffd2d47544b72b6e5f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67c2812359513d8787e6cc8a6d251eaa
publicationDate	1986-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	EP-0202515-A1
titleOfInvention	Semiconductor memory
abstract	A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed at the side walls and the base of a groove (17) formed in a semiconductor substrate (10). The first electrode is formed by the substrate surrounding the groove, the capacitor insulation film is formed on the side walls and the base thereof. The second electrode is formed by conductive material integrally formed with the source and drain regions (15) of the insulated-gate field-effect transistor.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257155-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8964479-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5495439-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8964461-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093311-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4332074-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9524971-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812179-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5013679-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9240496-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10418091-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4434040-C2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9679612-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4434040-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4999811-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9553186-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031069-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8947965-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9331083-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8982633-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8861247-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9276000-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425190-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9019788-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11081486-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142264-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304837-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9019759-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5888854-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064730-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263133-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4864374-A
priorityDate	1982-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-2441385-A1
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099809 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6338112 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578835

Total number of triples: 63.