| abstract |
Method for growing an epitaxial crystal layer on a substrate, comprising a) placing a heated substrate in the reaction zone of a reaction chamber, b) establishing a gas flow supplied by a carrier gas containing at least 50% by volume an inert gas, which contains, in the vapor phase, at least one alkyl of an element chosen from groups Vb and VIb of the periodic table, c) passing the gas flow through the reaction zone to bring it in contact with the heated substrate, and d) irradiating at least a large part of the surface of the substrate with electronic radiation in order to allow the photolytic decomposition of at least one alkyl and the subsequent epitaxial deposition of the layer containing said element through at least a large part of the surface of the substrate. |