http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0199061-A3
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-124 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-70 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1986-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1988-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0199061-A3 |
| titleOfInvention | Semiconductor devices |
| abstract | A fully self-aligned polycrystalline silicon emitter bipolar ntransistor. Self-alignment of the p⁺ base contact (12) nis achieved by using oxidised sidewalls (8) (sidewall spacers) of the nemitter mesa (7) as part of the p⁺ base contact nimplantation mask. Collector contact (13) alignment can be achieved nusing oxidised sidewalls (17) of polycrystalline silicon nalignment mesas (14) defined in the same polysilicon as the emitter nmesa (7) but deposited on oxide (2) rather than the nimplanted base region (5). |
| priorityDate | 1985-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.