| abstract |
A material for use in the manufacture of semiconductor devices, a process for manufacturing the material, and a heat radiator structure for a semiconductor device. The material is a binary Al-Si alloy containing 30-60% by weight of Si. n<??>This material can be produced by powder metallurgy techniques, such as by preparing a dispersion of Si powder in Al by mechanical alloying or by applying gas atomization, after which the powder is formed by hot extrusion, e.g. into radiation fins. n<??>The heat radiator structure consists of the radiation fins, made from the Al-Si alloy, glued to the substrate. |