| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5893
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
1985-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec994848224538eab6d8317cfbd26ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b9a7873b059e467d0c2e659052c1fcb |
| publicationDate |
1986-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0169020-A1 |
| titleOfInvention |
A process for ion implantation activation in a compound semiconductor crystal |
| abstract |
An ion implantation activation process employs as an annealing source a member having a surface (2) containing interstices (3) and containing the most volatile element of the compound semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4713354-A |
| priorityDate |
1984-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |