http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0163830-A3
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0346 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-467 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-388 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49866 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1985-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1987-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0163830-A3 |
| titleOfInvention | Multi-layer integrated circuit substrates and method of manufacture |
| abstract | A thin film composite structure consists of at least two nlayers (M1, M2) of electrical wiring (11, 15) composed of a nmetal such as copper separated from each other for the nmost part by an intervening layer of an insulating material nsuch as polyimide. A layer (12, 14) of a composite of an nadhesion metal and a conductive metal (Cr-Cu "blend") is ninterposed between the copper wiring (11, 15) and the innsulating material (13) as well as between the copper wiring nwhere they join in regions (16) where the dielectric has been nopened to form vias and other electrical junction points nbetween the layers. The preferred composition of the n"blend" is in the range from 5-95 atomic percent Cr and n95-5 atomic percent Cu although other metals can be comnbined with each. The purpose of the thin "blend" film is to nenhance the adhesion of the layers while not increasing the nresistance of the contacts between the upper and lower nconducting layers, at the vias and other electrical junction npoints. |
| priorityDate | 1984-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.