| abstract |
A method of fabricating a deep buried layer in an SOI device, for example for use in forming a bipolar transistor based on SOI technology, is provided. Also, the formation of a conduction path connecting to the deep buried layer is provided for. The side surface(s) of an epitaxial layer (18, 38) having a thickness of about ten microns, for example, which is grown on a single crystalline island (19, 39) - providing the deep buried layer - formed by recrystallizing a polycrystalline layer (13a) formed on an insulating layer (12, 12a), is tentatively exposed and a conduction path (21, 42) is formed at the side surface(s). Two ways of forming the tentative exposed side surface(s) and the conduction path (21, 42) are specifically described. |