http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0134249-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7962109cd4763907b82b66760cd0ae8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-853 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 |
| filingDate | 1984-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dc8f0892534f4f02ba4c4c9362689b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45252dcbf711b474ce59650474ec7792 |
| publicationDate | 1985-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0134249-A1 |
| titleOfInvention | Process for the production of a thin-film dielectric |
| abstract | A thin-film dielectric comprising a conductive substrate having formed thereon a thin layer of a ternary composition of lead titanate zirconate or lanthanum-containing lead titanate zirconate (PLZT) prepared by adding an ingredient represented by the formula Pb(M' 1/3 M' 2/3 )O 3 (wherein M' represents a divalent transition metal, and M' represents Ta or Nb), as a third component to lead titanate (PT) and lead titanate zirconate (PZT) to form a solid solution. The total film thickness of the dielectric composition is 0.1 to 100µm. The thin-film dielectric is produced by coating the substrate with an organic solvent solution of β-diketone or the like as a precursor for said dielectric in a uniform thickness, prebaking at a temperature higher than the decomposition temperature of the organic material contained in the coating and lower than the crystallization temperature of the dielectric in an oxygen-containing stream, repeating the coating-prebaking procedure, then fully baking at a temperature higher than the crystallization temperature of the dielectric composition or repeating the coating with the precursor solution and the full baking procedure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5198158-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0487213-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6007868-A |
| priorityDate | 1983-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.