| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0154
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-467 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49883 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-00 |
| filingDate |
1984-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42e8351edebd8d5a05fee9c3ced44253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4928e24dd48a74169f265e9ccc6249b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97ba825822b2157ce718ed85d9700ebc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a02a251555858312c4b05c38b25683d |
| publicationDate |
1984-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0123954-A2 |
| titleOfInvention |
Structure containing a layer consisting of polyimide and an inorganic filler and method for producing such a structure |
| abstract |
A structure comprising on a substrate successive layers of metal circuitry having therebetween as a dielectric a cured polyimide composition containing a polyimide and aluminum oxide or zinc oxide or mixtures thereof. n The structure is produced by a method including the following process steps:n - blanket screen printing a mixture containing a polyamido carboxylic acid, aluminum oxide or zinc oxide or mixtures thereof and a detackifier with the rest being a solvent on a substrate with a layer of metal circuitry thereon, - drying the deposited layer at a temperature between about 25 and 120°C, - selectively etching holes into the deposited layer where vias between adjacent layers of metal circuitry are needed, - curing the deposited layer at a temperature between about 300 and 400°C and - forming another layer of metal circuitry. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2654963-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2337756-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2337756-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6476774-B1 |
| priorityDate |
1983-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |