http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0119225-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-6489 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-308 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 1983-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1987-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1987-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0119225-B1 |
titleOfInvention | Photoluminescence method of testing double heterostructure wafers |
abstract | Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers (12) containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source (16) does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs. Photoluminescence is detected by spectrometer (36) while the intensity from optical source (16) is varied by variable attenuator (20). A photoluminescence intensity versus excitation beam intensity characteristic is produced by a recorder (38) responsive to the output of spectrometer (36) and to the output of the variable attenuator (20) as seen by power monitor (26). |
priorityDate | 1982-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.