http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0118506-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_893465b5a321f5491ad2e2fe60b0240b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 |
| filingDate | 1983-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8f809c366bad0231c64f394bbd7217a |
| publicationDate | 1984-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0118506-A1 |
| titleOfInvention | Non-volatile semiconductor memory device |
| abstract | A non-volatile semiconductor memory includes a semiconductor substrate (10), a layer of silicon dioxide (12) disposed on the semiconductor substrate (10), a layer of silicon oxynitride (13) disposed on the layer of dioxide dioxide silicon (12) and a conductive gate electrode (14) disposed on the silicon oxynitride layer (13). The non-volatile memory device can be a capacitor or, where source and drain regions (15, 16) exist, a transistor. The silicon dioxide layer (12) may have parts (12A) of greater thickness near the source and drain regions (15, 16). The device has a high charge retention capacity. |
| priorityDate | 1982-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.