| abstract |
Lateral FET structure (102, Figures 13,21) is disclosed for bidirectional power switching, including AC application. A notch (118) extends downwardly from a top major surface (106) to separate left and right source regions (140 and 144) and left and right channel regions (144 and 146), and direct the drift region (148) current path between the channels (144 and 146) around the bottom of the notch (118). Gate electrode means (132) in the notch (118) proximate the channels (144 and 146) controls bidirectional conduction. |