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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-40
filingDate 1981-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a38c9848728c7fbc39812b5f096bd0ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b77fd9b79ed3107eb2c7678248aa2a8
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publicationDate 1983-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0096034-A1
titleOfInvention NON-ELECTROLYTIC COPPER DEPOSITION SOLUTIONS.
abstract Appropriately complexed copper solutions can deposit copper conductive films on electrically nonconductive catalyzed substrates without passing an electric current, at pH values ranging from approximately 2.0 to 3.5 in the plating bath. using a non-formaldehyde reducer such as hypophosphite. To obtain good results, the following conditions are essential: 1) the complexer chosen must be able to chelate the copper at pH values between 2.0 and 3.5 at high temperatures (140o to 160oF); 2) avoid large concentrations of certain anions in the plating solution, such as halides and acetates; and 3) an "active" catalytic surface must be provided on the non-conductive substrate.
priorityDate 1981-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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