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filingDate 1983-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a890ce388dc62a5b17acade54b8175e9
publicationDate 1983-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0091859-A2
titleOfInvention Method for the production of a semiconductor laser having several independent wavelengths
abstract Method for producing a laser with several wavelengths and laser obtained. A first double heterostructure is produced on a substrate (10) by epitaxy with an active layer having a first composition. This first heterostructure is adapted to the substrate, through a mask provided with strip-shaped openings. A second double heterostructure (B, B '...) is grown in the pickled parts with an active layer having a second composition. A groove (24) is etched between the first (A) and the second (B) heterostructure and then a proton bombardment of the groove (24) is carried out. Application in optical telecommunications.
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