| abstract |
In a first region (2) of a monolithic direct bandgap semiconductor device, an electrical input signal is converted to photons which serve as carriers of the signal through a semi-insulating substrate (8). The photons are reconverted to an electrical output signal in a second region (10) of the device. At least one (10) of the signal conversion regions has a multi-PN-junction structure with the PN junctions disposed obliquely to the photon path through the device. Alternatively, the second region may perform the electrical signal-to-photon signal conversion and the first region the photon signal-to-electrical signal conversion. …<??>Applications of the device are for the conversion of AC to DC signals, AC to AC signals and DC to DC signals. The device can also serve as an electron accelerator capable of providing a field of 2000 volts per centimeter. |