| abstract |
Method for converting a multilayer semiconductor structure (20), comprising active regions of semiconductors (22) placed between layers of semiconductor barrier (24), into a disordered alloy by the selective introduction of disturbing elements or ions of Zn, Fi or As in the multilayer structure. The disordered alloy has a higher energy band gap while maintaining a unique crystallinity. This process is used, for example, in the manufacture of Schottky barrier field effect transistors (Fig. 5), light-emitting diodes (Fig. 3-4) and integrated electro-optical devices (Fig. 6) . |