| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e65e0aec2f8e9e7fe796d39c10ab4ef0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0387 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L77-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G69-26 |
| filingDate |
1982-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ef6cce242836a5167d4a22526c5ed22 |
| publicationDate |
1983-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0077056-A1 |
| titleOfInvention |
Negative-type resist sensitive to ionizing radiation |
| abstract |
A polyamide polymer having recurring units represented by the formula:n wherein R represents at least one divalent organic group, has excellent characteristics such as high sensitivity, high resolving power and excellent dry etching resistance suitable as a negative-type resist in ionizing radiation lithography. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4520097-A |
| priorityDate |
1981-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |