http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0076802-A1

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filingDate 1982-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e8165e3691da7460e34a1ebc9bb9b51
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publicationDate 1983-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0076802-A1
titleOfInvention High current package with multi-level leads
abstract An improved high power semiconductor device (80) and a manufacturing method are described, or one or more dais (64-66) are assembled on an electrode (41) having a heat transfer face (42b) and additional isolated electrodes (47, 53), these electrodes (41, 47, 53) having upwardly folded (43, 49, 55) and folded (50, 83; 44, 84; 56, 58) portions forming terminals high intensity (83, 84) and control terminals (56, 58) so that the high intensity current terminals (83, 84) and the control terminals (56, 58) are in different planes for that the spacings between the terminals (91, 93, 94, 95) respect the recommendations of the 'Underwritters Laboratory'. The canopy and electrode assembly (40) is partially encapsulated, preferably in a plastic (81). The current terminals (83, 84) are located diagonally to facilitate the use of standard busbar devices with different device orientations. Connection nuts (88) are movably retained to limit the transfer of the tightening torque to the plastic body (81). Choices of materials are described.
priorityDate 1981-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.