| abstract |
A method for producing a bipolar transistor which has no emitter-base short and which attains a high density for an integrated circuit comprises the steps of forming a polycrystalline silicon layer (10) on an anti-oxidation masking layer (8) placed on a base region (9), selectively etching the silicon layer (10) to form an opening (11), introducing impurities into the base region (9) to form an emitter region (17), converting the polycrystalline silicon layer (10) into an oxide layer (19) whereby the size of the opening (11) is reduced, selectively etching the anti-oxidation masking layer to form an emitter electrode opening (20), and forming electrodes (23, 24, 25). |