http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0071494-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c23a1323673a16fb6f1c1f6df4fe292b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1982-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b650c81fe4ebd39489e4d372b6a6981 |
| publicationDate | 1983-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0071494-A1 |
| titleOfInvention | Method of making integrated bipolar transistors of very small dimensions |
| abstract | The invention relates to the manufacture of bipolar transistors integrated on silicon.n n n To make very small transistors, we start by depositing polycrystalline silicon (after a localized oxidation step) which is etched and doped so that it serves as a source of dopant for basic regions extrinsic P + (44) of the transistor. After doping of the intrinsic base P (48), oxide and / or nitride (52) are then deposited at low pressure which is implanted with an impurity facilitating its dissolution. On the vertical walls of polycrystalline silicon around the base, the nitride is not dissolved. Elsewhere it dissolves easily. We take advantage of the oxide or nitride thickness which remains to form by diffusion an N + emitter region (56) which will not extend laterally to the extrinsic base (44) of P + type but which will leave an intrinsic base (48) of very small thickness. The emitter diffusion can be done through a second layer of polycrystalline silicon (54). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2194676-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0153686-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0421507-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0142632-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4889823-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0153686-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0421507-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0239825-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0226890-A1 |
| priorityDate | 1981-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.