http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0067840-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d9f3ca41550d315642580237250c5b0 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24917 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S428-901 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66954 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-339 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14 |
| filingDate | 1981-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42a7383f347ea15dcee6f241f77c4b71 |
| publicationDate | 1982-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0067840-A1 |
| titleOfInvention | METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL SEMICONDUCTOR DEVICE HAVING A TRANSPARENT METAL OXIDE ELECTRODE. |
| abstract | Method of manufacturing a semiconductor electro-optical device having a patterned transparent metal oxide electrode. According to this method, a layer (18) of transparent conductive metal oxide is deposited on the surface of a semiconductor substrate (12). The transparent conductive layer (18) is then covered with a layer (20) of a transition metal (preferably chromium) which forms a good electrical contact with the transparent metallic oxide and which can be attacked chemically independently of transparent metal oxide. Parts of the transition metal are removed by chemical attack (for example using photolithographic techniques) in order to define the desired electrode transition using a chemical attack agent which attacks the transition metal but does not substantially attack the transparent metal oxide layer. Parts of the exposed transparent metal oxide layer are then removed using a chemical etchant which attacks the transparent metallic oxide but does not substantially attack the transition metal. Parts of the transition metal remaining from the imaging areas of the device are then removed, leaving the transition metal only in the peripheral areas where electrical connections are to be made. In the preferred embodiment, a final layer of metallization (28) (for example gold) is deposited on the structure, and this is passed through the oven to adhere the final metal to the remaining parts of the metal. of transition. Finally, parts of the final layer of metal are removed, leaving this final layer only in the areas of the common conductor and the bonding areas defined by the transition metal. |
| priorityDate | 1980-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.