http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0054650-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-10778
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-107
filingDate 1981-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e473c985b4dcae2e6f257c8b9acfd515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55ec5cc0a62bbf003a14b91425f5482f
publicationDate 1982-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0054650-A1
titleOfInvention Method of purifying chlorosilanes
abstract The present invention deals with the purification of chlorosilanes. According to the claimed process, both traces of boron compounds can be removed from the chlorosilanes so that they can be used for the direct production of semiconductor silicon, as well as traces of impurities in heavy metals. The removal of these heavy metal traces is particularly important when cleaning tetrachlorosilane if it is to be used for the production of optical fibers. According to the claimed process, the chlorosilanes are brought into intimate contact with compounds which have a Si-O-Si group in the presence of small amounts of hydrogen halide, and the chlorosilane is then distilled off. According to the invention, the compounds which contain a Si-O-Si group include chlorosiloxanes and finely divided SiO2. These compounds can also be generated in situ by adding chloric acid to the chlorosian.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9040009-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3168190-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0107784-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9458294-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5026533-A
priorityDate 1980-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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