| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c23a1323673a16fb6f1c1f6df4fe292b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-16 |
| filingDate |
1981-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1504198784c34e9f3f520f894216b8fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_273bfdc4f7d6ba77889e9f14e0480ab5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d390e92807ec37b5dfea7a9799a8a00 |
| publicationDate |
1981-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0042773-A1 |
| titleOfInvention |
Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices |
| abstract |
The method of the invention consists in introducing into the layer containing silicon, simultaneously with the deposition of silicon, another element from column IVa of the periodic table, this element being in a proportion less than or equal to 5% of the number of silicon atoms and greater than 0.1%. In a preferred variant, this element is germanium. The deposition takes place at a temperature close to the crystallization temperature T. The process can comprise a subsequent phase during which the deposited layer is subjected to a heat treatment in an atmosphere of a plasma containing hydrogen or one of its isothopes, at a temperature below the crystallization temperature T of the layer.n n n Application to the production of photoelectric conversion devices (30) comprising at least one layer (32) containing silicon produced according to this method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0073075-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4766008-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2179790-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4835059-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0073075-A2 |
| priorityDate |
1980-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |