| abstract |
The longitudinal mode control, thus making it possible to obtain more useful devices, is carried out by a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a hole trap or electronic at deep level. the trap is chosen so as to have a carrier capture section (Alpha) o and an optical section (Alpha) o so that the ratio of P, representing the average number of photons per cubic centimeter, on Ps is between 0 , 1 and 100, where Ps is equal to (N (Alpha) e V (Alpha) oCo), N is the carrier density, V is the carrier thermal speed, and Co is the speed of light in the material. In a specific embodiment, the active region is bombarded with photons to obtain deep-level electronic traps in the active region. |