| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_07c8174183e84de11d7327397ddec1c7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-981 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate |
1981-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_502417a3b9f9135d61535f6613624808 |
| publicationDate |
1984-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0031367-A4 |
| titleOfInvention |
METHOD FOR MOLDING CONSTANT CAPACITORS FOR INTEGRATED CIRCUIT OF THE MOS TYPE. |
| abstract |
For an integrated circuit semiconductor device (10) having a multiplicity of MOSFET elements, (14-16-18) voltage-invariant capacitors, each with metal (38) as one plate and either polysilicon (22) or source-drain diffusion as the second plate, are created by regrowing a thin oxide layer (34) to provide the dielectric of the capacitor during the normal MOSFET processing sequence. |
| priorityDate |
1979-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |