| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate |
1979-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_616483863905ce164e41b542f08e1aa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337709746312941c0cc6a92bf61d6991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b32549e81c094e79122066f6065c1ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1cd298a0d28afa96b2e7704eed3b5e7 |
| publicationDate |
1980-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0011629-A1 |
| titleOfInvention |
Shallow-homojunction solar cells |
| abstract |
Improvements to surface homojunction solar cells formed by a plurality of layers of semiconductor material with direct interaction space such as GaAs, as well as their manufacture. Solar cells with surface homojunction have an n + / p / p + structure (26, 24, 22) in which the upper layer n + (26) is limited in thickness, which makes it possible to have significant carrier activity at the level of the layer lower semiconductor (24). An anti-reflective coating (28) is applied to the upper n + layer (26), application preferably carried out by anodic treatment. These solar cells can be produced on relatively inexpensive substrates such as silicon or germanium. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10839960-B2 |
| priorityDate |
1978-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |